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| 貨號 | CAS號 | 編號 | 包裝 | 參數(shù) |
| 100775 | 7440-42-8 | XF070 | 1 盒 | 面積: 5cmx2.5cm |
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength and thermal conductivity of h-BN has been reported to be close to that of graphene. h-BN has an even higher chemical stability than graphene; it can be stable in air up to 1000 °C (in contrast, for graphene the corresponding temperature is 600 °C).
During Chemical Vapor Deposition, BN is grown on both sides of the copper foil
· Close to complete coverage (90-95%), with some minor holes
· Average Thickness of BN film is 13 nm
· Thickness of the copper foil is 20 microns
· Quality is confirmed by TEM. TEM shows perfect hexagonal structure.
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