參考價格
面議型號
品牌
產(chǎn)地
美國樣本
暫無看了sinton instruments+suns-Voc測試儀的用戶又看了
虛擬號將在 180 秒后失效
使用微信掃碼撥號
suns-Voc測試儀
如何利用Suns-Voc進行漿料與燒結(jié)技術(shù)優(yōu)化
少子壽命,PN結(jié)的好壞,表面及體內(nèi)的復(fù)合情況,材料質(zhì)量、鈍化效果等" b3 X _6 K$ b1 u" ~- I. E1 V; A
Life time,Pseudo-EFF, Pseudo-Voc, Pseudo-FF, Ideality factor
對比該曲線與*后測定的I至V曲線,可以準(zhǔn)確測量出電池的串聯(lián)電阻。
Suns-Voc系統(tǒng)特征
·晶元測定的溫控為25°C
·電壓探針的高精準(zhǔn)度
·兼容磁性探針
·配備全套濃度補正濾色片的疝氣燈
·后支柱可調(diào)節(jié)高度,準(zhǔn)確調(diào)節(jié)亮度
·適用標(biāo)準(zhǔn)I至V曲線圖及Suns-Voc曲線圖
·不受串聯(lián)電阻的影響,測定晶片特征
Suns-Voc Applications
By either probing the silicon p+ and n+ regions directly or probing the metallization layer (if present), the illumination-Voc curve can be measured. This curve can be displayed as our well-known Suns-Voc plot or in the form of a standard photovoltaic curve which can be used to characterize shunting. The entire curve is measured at the open-circuit voltage, so it is free from the effects of series resistance. Comparing this curve to the final I-V curve gives a precise measure of the series resistance in the cel
暫無數(shù)據(jù)!